7 amps 600volts n-channel mosfet description the et7N60 nchannel enhancement mode silicon gate power mosfet is designed for high voltage, high speed pow er switching applications such as switching regulators, switchin g converters, solenoid, motor drivers, relay drivers . features r ds(on) = 1.20@v gs = 10 v low gate charge ( typical 29nc) high ruggedness fast switching capability avalanche energy specified improved dv/dt capability symbol absolute maximum ratings (t c =25 ,unless otherwise specified) ratings parameter symbol to220 to220f units drainsource voltage v dss 600 v gatesource voltage v gss 30 v t c =25 7.0 7.0 a drain currenet continuous t c =100 i d 4.3 4.3 a drain current pulsed (note 1) i dp 28 28 a repetitive (note 1) e ar 15.2 mj avalanche energy single pulse (note 2) e as 267 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns t c =25 152 50 w total power dissipation derate above 25 p d 1.21 0.40 w/ junction temperature t j +150 storage temperature t stg 55~+150 drain current limited by maximum junction temperatu re. 7N60 beijing estek electronics co.,ltd 1
thermal characteristics ratings parameter symbol to220 to220f units thermal resistance junctionambient r thja 62.5 thermal resistance, casetosink typ. r thcs 0.5 thermal resistance junctioncase r thjc 0.82 2.5 /w electrical characteristics t j =25 ,unless otherwise specified. 1. repetitive rating : pulse width limited by maxim um junction temperature 2. l =10 mh, i as = 7.0 a, v dd = 50v, r g = 25 , starting tj = 25c 3. i sd 7.0 a, di/dt 200a/ s, v dd bv dss , starting tj = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature parameter symbol test conditions min typ max units off characteristics drainsource breakdown voltage bv dss v gs =0v,i d =250a 600 v v ds =600v,v gs =0v 1 a zero gate voltage drain current i dss v ds =480v,t c =125 10 a forward v gs =30v,v ds =0v 100 na gatebody leakage current reverse i gss v gs =30v,v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a 0.7 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drainsource onresistance r ds(on) v ds =10v,i d =3.5a 0.98 1.20 dynamic characteristics input capacitance c iss 1000 pf output capacitance c oss 110 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1mh z 12.6 pf switching characteristics turnon delay time t d(on) 20 ns rise time t r 50 ns turnoff delay time t d(off) 80 ns fall time t f v dd =300v,i d =7.0a, r g =25 (note 4, 5) 70 ns total gate charge q g 29 nc gatesource charge q gs 4.7 nc gatedrain charge q gd v ds =480v, i d =7.0a v gs =10v (note 4, 5) 12.5 nc drain-source diode characteristics drainsource diode forward voltage v sd v gs =0v,i sd =7.0a 1.4 v continuous drainsource current i sd 7.0 a pulsed drainsource current i sm 28.0 a reverse recovery time t rr 350 ns reverse recovery charge q rr i sd =7.0a, di sd /dt=100a/s (note 4) 3.3 c beijing estek electronics co.,ltd 2 7N60
typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 1. on - region characteristics figure 2. transfer characteristics beijing estek electronics co.,ltd 3 7N60
typical characteristics (continued) figure 7. breakdown voltage variation figure8. on-resistance variation vs temperature figure 10. maximum drain current vs case temperature figure 9-2. maximum safe operating area for to220f figure 9-1. maximum safe operating area for to220 beijing estek electronics co.,ltd 4 7N60
typical characteristics (continued) figure 11-1. transient thermal response curve figure 11 - 2 . transient thermal response curve for t o220f beijing estek electronics co.,ltd 5 7N60
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